Near-field optical study of InGaN/GaN epitaxial layers and quantum wells
Identifieur interne : 015F12 ( Main/Repository ); précédent : 015F11; suivant : 015F13Near-field optical study of InGaN/GaN epitaxial layers and quantum wells
Auteurs : RBID : Pascal:98-0241086Descripteurs français
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- 7866F, 6172F, 6172L, 7855C, 0779F, 0779L, 6835B, 6835C, Etude expérimentale, Indium composé, Gallium composé, Semiconducteur III-V, Couche épitaxique semiconductrice, Puits quantique semiconducteur, Microscopie optique, Germination dislocation, Microscopie force atomique, Photoluminescence, Structure interface.
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Abstract
We have employed near-field scanning optical microscopy to investigate the influence of specific microstructural defects on the optical properties of thin InGaN/GaN epilayers and quantum wells. These defects are empty pinholes with a hexahedron cone morphology that are nucleated by threading dislocations from the GaN buffer layer. By correlating atomic force microscopy with spatially and spectrally resolved photoluminescence (PL) on a 100 nm spatial scale, we find that the pinholes have no clearly observable effect on the PL efficiency, at least partly due to the strong carrier localization in the InGaN nonrandom alloy. © 1998 American Institute of Physics.
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Chen</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Hewlett-Packard Laboratories, Palo Alto, California 94304</s1><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>Hewlett-Packard Laboratories, Palo Alto</wicri:cityArea></affiliation></author><author><name sortKey="Wang, S Y" uniqKey="Wang S">S.-Y. Wang</name></author></titleStmt><publicationStmt><idno type="inist">98-0241086</idno><date when="1998-05-25">1998-05-25</date><idno type="stanalyst">PASCAL 98-0241086 AIP</idno><idno type="RBID">Pascal:98-0241086</idno><idno type="wicri:Area/Main/Corpus">017124</idno><idno type="wicri:Area/Main/Repository">015F12</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Atomic force microscopy</term><term>Dislocation nucleation</term><term>Experimental study</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Interface structure</term><term>Optical microscopy</term><term>Photoluminescence</term><term>Semiconductor epitaxial layers</term><term>Semiconductor quantum wells</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7866F</term><term>6172F</term><term>6172L</term><term>7855C</term><term>0779F</term><term>0779L</term><term>6835B</term><term>6835C</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium composé</term><term>Semiconducteur III-V</term><term>Couche épitaxique semiconductrice</term><term>Puits quantique semiconducteur</term><term>Microscopie optique</term><term>Germination dislocation</term><term>Microscopie force atomique</term><term>Photoluminescence</term><term>Structure interface</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We have employed near-field scanning optical microscopy to investigate the influence of specific microstructural defects on the optical properties of thin InGaN/GaN epilayers and quantum wells. 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